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? semiconductor components industries, llc, 2015 october, 2015 ? rev. 1 1 publication order number: nxh80t120l2q0/d NXH80T120L2Q0PG, nxh80t120l2q0sg t-type, neutral point clamp module this high?density, integrated power module combines high?performance igbt s with rugged anti?parallel diodes for sine wave inverter applications. features ? extremely efficient trench igbt with fieldstop technology ? module design offers high power density ? low inductive layout ? q0pack package with press?fit pins typical applications ? solar inverters ? uninterruptable power supplies absolute maximum ratings rating symbol value unit bridge igbt collector?emitter voltage v ces 1200 v collector current t h = 80 c i c 65 a pulsed collector current, t pulse limited by t jmax i cm 260 a gate?emitter voltage v ge 20 v power dissapation per igbt t j = t jmax t h = 80 c p total 146 w short circuit withstand time v ge = 15 v, v ce = 600 v, t j 150 c t sc 10 s neutral point igbt collector?emitter voltage (bridge) v ces 600 v collector current @ t h = 80 c i c 59 a pulsed collector current, t pulse limited by t jmax i cm 235 a gate?emitter voltage v ge 20 v power dissapation per igbt t j = t jmax t h = 80 c p total 66 w short circuit withstand time v ge = 15 v, v ce = 400 v, t j 150 c t sc 5 s stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www. onsemi.com ordering information marking diagram see detailed ordering and shipping information in the dimensions section on page 13 of this data sheet. q0pack case 180aa yyww = year and work week code xxxxxxxxxxxxxxxx yyww 3,4 12 13 76 5,14 19 20 t l11 l3 l4 l7 l8 15,16 l2 8,9 10,11 17 18 1 2 l1 l6 l5 80 a, 1200 v (bridge) 50 a, 600 v (neutral point clamp) t ? type neutral point clamp schematic q0pack case 180ab
NXH80T120L2Q0PG, nxh80t120l2q0sg www. onsemi.com 2 pin assignments 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 absolute maximum ratings rating symbol value unit bridge diode peak repetitive voltage v rrm 1200 v forward current, dc @ t c = 80 c i f 32 a power dissipation per diode t j = t jmax t h = 80 c p total 73 w nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 300 a i 2 t ? value (surge applied at rated load conditions halfwave, single phase, 60 hz) i 2 t 373.5 a 2 s neutral point diode diode peak repetitive voltage v rrm 600 v forward current, dc @ t h = 80 c i f 30 a power dissipation per diode t j = t jmax t h = 80 c p total 54 w nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 500 a i 2 t ? value (surge applied at rated load conditions halfwave, single phase, 60 hz) i 2 t 1037.5 a 2 s thermal & safety characteristics rating symbol value unit maximum junction temperature range igbt diode t j 175 175 c storage temperature range t stg ?40 to 150 c operating temperature under switching conditions t vj op ?40 to 150 c isolation test voltage, t = 1 min, 60 hz v is 2500 vac creepage distance 12.7 mm clearance 12.7 mm
NXH80T120L2Q0PG, nxh80t120l2q0sg www. onsemi.com 3 electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit half bridge igbt characteristics collector?emitter breakdown voltage v ge = 0 v, i c = 500 a v (br)ces 1200 ? ? v collector?emitter saturation voltage v ge = 15 v, i c = 80 a, t j = 25 c v ge = 15 v, i c = 80 a, t j = 150 c v ce(sat) 1.7 2.17 2.20 2.8 v gate?emitter threshold voltage v ge = v ce , i c = 1.5 ma v ge(th) 5.0 6.0 6.5 v collector?emitter cutoff current v ge = 0 v, v ce = 1200 v i ces ? ? 100 a gate leakage current v ge = 20 v, v ce = 0 v i ges ? ? 1.2 a turn?on delay time t j = 25 c v ce = 350 v, i c = 56 a v ge = 15 v, r g = 4 t d(on) ? 20 ? ns rise time t r ? 28 ? turn?of f delay time t d(off) ? 280 ? fall time t f ? 28 ? turn on switching loss e on ? 0.670 ? mj turn off switching loss e off ? 1.3 ? turn?on delay time t j = 150 c v ce = 350 v, i c = 56 a v ge = 15 v, r g = 4 t d(on) ? 16 ? ns rise time t r ? 30 ? turn?of f delay time t d(off) ? 320 ? fall time t f ? 230 ? turn on switching loss e on ? 0.975 ? mj turn off switching loss e off ? 3.00 ? input capacitance v ce =20 v. v ge = 0 v. f = 10 khz c ies ? 19940 ? pf output capacitance c oes ? 592 ? reverse transfer capacitance c res ? 383 ? gate charge total v ce = 960 v, i c = 40 a, v ge = 15 v q g ? 840 ? nc thermal resistance, chip?to?heatsink thermal grease thickness 50 m = 1 w/mk r jh 0.65 c/w half bridge diode characteristics forward voltage v ge = 0 v, i f = 50 a, t j = 25 c v ge = 0 v, i f = 50 a, t j = 150 c v f 1.5 ? 2.25 2.27 3.4 ? v reverse recovery time t j = 25 c v ce = 350 v, i c = 56 a v ge = 15 v, r g = 4 t rr ? 0.068 ? s reverse recovery charge q rr ? 3 ? c peak reverse recovery current i rrm ? 105 ? a peak rate of fall of recovery current di/dt max ? 1896 ? a/ s reverse recovery energy e rr ? 0.215 ? mj reverse recovery time t j = 150 c v ce = 350 v, i c = 56 a v ge = 15 v, r g = 4 t rr ? 0.084 ? s reverse recovery charge q rr ? 3.6 ? c peak reverse recovery current i rrm ? 110 ? a peak rate of fall of recovery current di/dt max ? 1740 ? a/ s reverse recovery energy e rr ? 0.438 ? mj thermal resistance, chip?to?heatsink thermal grease thickness 50 m = 1 w/mk r jh 1.38 c/w
NXH80T120L2Q0PG, nxh80t120l2q0sg www. onsemi.com 4 electrical characteristics (t j = 25 c unless otherwise specified) parameter unit max typ min symbol test conditions neutral point clamp igbt characteristics collector?emitter breakdown voltage v ge = 0 v, i c = 500 a v (br)ces 600 ? ? v collector?emitter saturation voltage v ge = 15 v, i c = 30 a, t j = 25 c v ge = 15 v, i c = 30 a, t j = 150 c v ce(sat) 1.1 1.3 1.3 1.8 v gate?emitter threshold voltage v ge = v ce , i c = 1.2 ma v ge(th) 5.0 5.7 6.5 v collector?emitter cutoff current v ge = 0 v, v ce = 600 v i ces ? ? 100 a gate leakage current v ge = 20 v, v ce = 0 v i ges ? ? 0.60 a turn?on delay time t j = 25 c v ce = 350 v, i c = 56 a v ge = 15 v, r g = 4 t d(on) ? 26 ? ns rise time t r ? 32 ? turn?of f delay time t d(off) ? 166 ? fall time t f ? 62 ? turn on switching loss e on ? 0.193 ? mj turn off switching loss e off ? 0.719 ? turn?on delay time t j = 150 c v ce = 350 v, i c = 56 a v ge = 15 v, r g = 4 t d(on) ? 22 ? ns rise time t r ? 32 ? turn?of f delay time t d(off) ? 170 ? fall time t f ? 32 ? turn on switching loss e on ? 0.293 ? mj turn off switching loss e off ? 1.100 ? input capacitance v ce =20 v. v ge = 0 v. f = 10 khz c ies ? 9900 ? pf output capacitance c oes ? 270 ? reverse transfer capacitance c res ? 270 ? gate charge total v ce = 480 v, i c = 75 a, v ge = 15 v q g ? 390 ? nc thermal resistance, chip?to?heatsink thermal grease thickness 50 m = 1 w/mk r jh 1.35 c/w neutral point clamp diode characteristics forward voltage v ge = 0 v, i f = 60 a t j = 25 c v ge = 0 v, i f = 60 a, t j = 150 c v f ? ? 1.7 1.8 2.4 ? v reverse recovery time t j = 25 c v ce = 350 v, i c = 56 a v ge = 15 v, r g = 4 t rr ? 0.390 ? s reverse recovery charge q rr ? 10 ? c peak reverse recovery current i rrm ? 70 ? a peak rate of fall of recovery current di/dt max ? 1560 ? a/ s reverse recovery energy e rr ? 3.60 ? mj reverse recovery time t j = 150 c v ce = 350 v, i c = 56 a v ge = 15 v, r g = 4 t rr ? 0.260 ? s reverse recovery charge q rr ? 8.6 ? c peak reverse recovery current i rrm ? 75 ? a peak rate of fall of recovery current di/dt max ? 1480 ? a/ s reverse recovery energy e rr ? 2.80 ? mj thermal resistance, chip?to?heatsink thermal grease thickness 50 m = 1 w/mk r jh 1.86 c/w product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
NXH80T120L2Q0PG, nxh80t120l2q0sg www. onsemi.com 5 half bridge characteristics figure 1. output characteristics figure 2. output characteristics v ce , collector?emitter voltage (v) v ce , collector?emitter voltage (v) 5 4 3 2 1 0 0 50 100 150 200 250 300 350 5 4 3 2 1 0 0 50 100 150 200 250 300 350 figure 3. typical transfer characteristics figure 4. diode forward characteristics v ge , gate?emitter voltage (v) v f , forward voltage (v) 9 8 7 5 4 3 1 0 0 20 60 80 100 140 180 200 7 6 5 4 3 2 1 0 0 20 40 80 120 140 180 200 figure 5. typical switching loss vs. ic figure 6. typical switching loss vs. rg ic (a) rg ( ) 90 70 60 50 30 20 10 0 0 0.5 1.0 2.0 3.0 3.5 4.0 5.0 25 20 15 10 5 0 0 0.5 1.0 2.0 3.0 3.5 4.0 5.0 i c , collector current (a) i c , collector current (a) i c , collector current (a) i c , collector current (a) switching loss (mj) switching loss (mj) 13 v 11 v 10 v 9 v 8 v 7 v t j = 25 c 20 v to 15 v 13 v 11 v 10 v 9 v 8 v 7 v t j = 150 c 20 v to 15 v t j = 25 c t j = 150 c 261011 40 120 160 t j = 25 c t j = 150 c 60 100 160 40 80 100 1.5 2.5 4.5 e off e on v ge = 15 v t j = 150 c v ce = 350 v r g = 4 1.5 2.5 4.5 e off e on v ge = 15 v t j = 150 c v ce = 350 v
NXH80T120L2Q0PG, nxh80t120l2q0sg www. onsemi.com 6 half bridge characteristics figure 7. typical switching time vs. ic figure 8. typical switching time vs. rg ic (a) rg ( ) 100 70 60 50 30 20 10 0 10 100 1000 25 20 15 10 5 0 10 100 1000 figure 9. typical reverse recovery energy loss vs. ic figure 10. typical reverse recovery energy loss vs. rg ic (a) rg ( ) 90 70 60 40 30 20 10 0 0 0.1 0.3 0.4 0.5 0.7 0.8 1.0 25 20 15 10 5 0 0 0.1 0.2 0.4 0.5 0.7 0.8 1.0 figure 11. typical reverse recovery time vs. ic figure 12. typical reverse recovery time vs. rg ic (a) rg ( ) 100 80 60 50 40 30 10 0 10 100 1000 14 12 10 8 6 4 2 0 10 100 1000 time (ns) time (ns) e rr , reverse recovery energy (mj) e rr , switching loss (mj) t rr , switching time (ns) t rr , switching time (ns) t d(on) t r v ge = 15 v t j = 150 c v ce = 350 v r g = 4 t f t d(off) 40 80 90 t d(on) t r v ge = 15 v t j = 150 c v ce = 350 v i c = 56 a t f t d(off) v ge = 15 v t j = 150 c v ce = 350 v r g = 4 v ge = 15 v t j = 150 c v ce = 350 v i c = 56 a 50 80 100 0.2 0.6 0.9 0.3 0.6 0.9 20 70 90 v ge = 15 v t j = 150 c v ce = 350 v r g = 4 16 v ge = 15 v t j = 150 c v ce = 350 v i c = 56 a
NXH80T120L2Q0PG, nxh80t120l2q0sg www. onsemi.com 7 half bridge characteristics figure 13. typical reverse recovery charge vs. ic figure 14. typical reverse recovery charge vs. rg ic (a) rg ( ) 90 70 60 50 40 20 10 0 0 1 2 3 4 5 6 7 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 figure 15. typical reverse recovery current vs. ic figure 16. typical reverse recovery current vs. rg ic (a) rg ( ) 90 80 60 50 40 30 10 0 0 20 40 60 80 100 120 25 20 15 10 5 0 0 20 40 60 80 100 120 figure 17. typical di/dt vs. ic figure 18. typical di/dt vs. rg ic (a) rg ( ) 90 80 60 50 40 20 10 0 0 500 1000 1500 2000 2500 25 20 15 10 5 0 0 500 1000 1500 2000 2500 q rr ( c) q rr ( c) irrm (a) irrm (a) di/dt (a/ s) di/dt (a/ s) v ge = 15 v t j = 150 c v ce = 350 v r g = 4 v ge = 15 v t j = 150 c v ce = 350 v i c = 56 a 30 80 100 16 v ge = 15 v t j = 150 c v ce = 350 v r g = 4 v ge = 15 v t j = 150 c v ce = 350 v i c = 56 a 30 70 100 20 70 100 v ge = 15 v t j = 150 c v ce = 350 v i c = 56 a v ge = 15 v t j = 150 c v ce = 350 v r g = 4
NXH80T120L2Q0PG, nxh80t120l2q0sg www. onsemi.com 8 half bridge characteristics figure 19. igbt transient thermal impedance figure 20. diode transient thermal impedance on?pulse width (s) on?pulse width (s) 1e?06 0.00001 0.0001 0.001 0.01 0.1 1 square?wave peak r(t) ( c/w) 0.001 0.01 0.1 1 10 square?wave peak r(t) ( c/w) 1e?05 1e?04 1e?03 1e?02 1e?01 1e+00 1e+01 1e?06 1e?05 1e?04 1e?03 1e?02 1e?01 1e+00 1e+01 single pulse 2% 5% 10% 20% 50% single pulse 2% 5% 10% 20% 50%
NXH80T120L2Q0PG, nxh80t120l2q0sg www. onsemi.com 9 neutral point characteristics figure 21. output characteristics figure 22. output characteristics v ce , collector?emitter voltage (v) v ce , collector?emitter voltage (v) 5 4 3 2 1 0 0 50 100 150 200 250 300 350 5 4 3 2 1 0 0 50 100 150 200 250 300 350 figure 23. typical transfer characteristics figure 24. diode forward characteristics v ge , gate?emitter voltage (v) v f , forward voltage (v) 9 8 7 5 4 3 1 0 0 20 60 80 100 140 180 200 5.0 4.0 3.5 3.0 2.0 1.5 1.0 0 0 20 40 80 120 140 180 200 figure 25. typical switching loss vs. ic figure 26. typical switching loss vs. rg ic (a) rg ( ) 90 70 60 50 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 25 20 15 10 5 0 0 0.5 1.0 2.0 3.0 3.5 4.0 5.0 i c , collector current (a) i c , collector current (a) i c , collector current (a) i c , collector current (a) switching loss (mj) switching loss (mj) 13 v 11 v 10 v 9 v 8 v t j = 25 c 20 v to 17 v 13 v 11 v 10 v 9 v 8 v 7 v t j = 150 c 20 v to 17 v t j = 25 c t j = 150 c 2 6 10 13 40 120 160 t j = 25 c t j = 150 c 60 100 160 15 v 15 v 11 12 0.5 2.5 4.5 40 80 100 e off e on v ge = 15 v t j = 150 c v ce = 350 v r g = 4 e off e on v ge = 15 v t j = 150 c v ce = 350 v 1.5 2.5 4.5
NXH80T120L2Q0PG, nxh80t120l2q0sg www. onsemi.com 10 neutral point characteristics figure 27. typical switching time vs. ic figure 28. typical switching time vs. rg ic (a) rg ( ) 90 80 60 50 40 20 10 0 10 100 1000 25 20 15 10 5 0 10 100 1000 figure 29. typical reverse recovery energy loss vs. ic figure 30. typical reverse recovery energy loss vs. rg ic (a) rg ( ) 90 80 60 50 40 30 10 0 0 0.5 1.0 2.0 3.0 3.5 4.0 5.0 25 20 15 10 5 0 0 0.5 1.0 2.0 3.0 3.5 4.0 5.0 figure 31. typical reverse recovery time vs. ic figure 32. typical reverse recovery time vs. rg ic (a) rg ( ) 90 70 60 50 40 20 10 0 10 100 1000 14 12 10 8 6 4 2 0 10 100 1000 time (ns) time (ns) e rr , switching loss (mj) t rr , switching time (ns) t rr , switching time (ns) t d(on) t r v ge = 15 v t j = 150 c v ce = 350 v r g = 4 t f t d(off) t d(on) t r v ge = 15 v t j = 150 c v ce = 350 v i c = 56 a t f t d(off) 30 70 100 v ge = 15 v t j = 150 c v ce = 350 v r g = 4 v ge = 15 v t j = 150 c v ce = 350 v i c = 56 a 20 70 100 e rr , reverse recovery energy (mj) 1.5 2.5 4.5 1.5 2.5 4.5 v ge = 15 v t j = 150 c v ce = 350 v r g = 4 v ge = 15 v t j = 150 c v ce = 350 v i c = 56 a 30 80 100 16
NXH80T120L2Q0PG, nxh80t120l2q0sg www. onsemi.com 11 neutral point characteristics figure 33. typical reverse recovery charge vs. ic figure 34. typical reverse recovery charge vs. rg ic (a) rg ( ) 90 70 60 50 40 20 10 0 0 1 3 4 6 7 9 10 14 12 10 8 6 4 2 0 0 1 2 4 5 7 8 10 figure 35. typical reverse recovery current vs. ic figure 36. typical reverse recovery current vs. rg ic (a) rg ( ) 90 70 60 50 40 20 10 0 0 20 40 60 80 100 120 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 figure 37. typical di/dt vs. ic figure 38. typical di/dt vs. rg ic (a) rg ( ) 90 80 60 50 40 20 10 0 0 500 1000 1500 2000 2500 25 20 15 10 5 0 0 500 1000 1500 2000 2500 q rr ( c) q rr ( c) irrm (a) irrm (a) di/dt (a/ s) di/dt (a/ s) v ge = 15 v t j = 150 c v ce = 350 v r g = 4 v ge = 15 v t j = 150 c v ce = 350 v i c = 56 a 30 80 100 2 5 8 16 3 6 9 v ge = 15 v t j = 150 c v ce = 350 v r g = 4 v ge = 15 v t j = 150 c v ce = 350 v i c = 56 a 30 70 100 30 80 100 v ge = 15 v t j = 150 c v ce = 350 v r g = 4 16 v ge = 15 v t j = 150 c v ce = 350 v i c = 56 a
NXH80T120L2Q0PG, nxh80t120l2q0sg www. onsemi.com 12 neutral point characteristics figure 39. igbt transient thermal impedance figure 40. diode transient thermal impedance on?pulse width (s) on?pulse width (s) 1e?06 0.00001 0.0001 0.001 0.01 0.1 10 square?wave peak r(t) ( c/w) 0.001 0.01 0.1 1 10 square?wave peak r(t) ( c/w) 1e?05 1e?04 1e?03 1e?02 1e?01 1e+00 1e+01 1e?06 1e?05 1e?04 1e?03 1e?02 1e?01 1e+00 1e+01 single pulse 2% 5% 10% 20% 50% single pulse 2% 5% 10% 20% 50% 1
NXH80T120L2Q0PG, nxh80t120l2q0sg www. onsemi.com 13 thermistor characteristics figure 41. thermistor characteristics temperature ( c) 115 95 85 65 55 45 35 25 0 2k 6k 10k 14k 18k 20k 24k resistance ( ) 75 105 125 4k 8k 12k 16k 22k ordering information orderable part number package shipping NXH80T120L2Q0PG (press fit pin) q0pack ? case 180aa (pb?free and halide?free) 24 units / blister tray nxh80t120l2q0sg (solder pin) q0pack ? case 180ab (pb?free and halide?free) 24 units / blister tray
NXH80T120L2Q0PG, nxh80t120l2q0sg www. onsemi.com 14 package dimensions pim20, 55x32.5 / q0pack case 180aa issue o
NXH80T120L2Q0PG, nxh80t120l2q0sg www. onsemi.com 15 package dimensions pim20, 55x32.5 / q0pack case 180ab issue o on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 nxh80t120l2q0/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative

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